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Infineon IRFS4310ZTRLPBF N-channel MOSFET, 127 A, 100 V HEXFET, 3-Pin D2PAK

IRFS4310ZTRLPBF Infineon  N-channel MOSFET, 127 A, 100 V HEXFET, 3-Pin D2PAK
IRFS4310ZTRLPBF
Infineon

Product Information

Maximum Continuous Drain Current:
127 A
Transistor Material:
Si
Width:
11.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
250 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
6 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 127 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS4310ZTRLPBF. While 127 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.3mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 120 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 250 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 6 mω maximum drain source resistance.

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IRFS4310ZPbF N-channel HEXFET Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You can order Infineon brand products with IRFS4310ZTRLPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRFS4310ZTRLPBF N-channel MOSFET, 127 A, 100 V HEXFET, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFS4310ZTRLPBF N-channel MOSFET, 127 A, 100 V HEXFET, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10001563 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10001563.
Yes. We ship IRFS4310ZTRLPBF Internationally to many countries around the world.