ON Semiconductor 2N5686G
Product Information
Transistor Type:
NPN
Dimensions:
38.86 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Saturation Voltage:
5 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 A
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2N5686
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 50A 2MHz 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 25A, 2V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
5V @ 10A, 50A
Supplier Device Package:
TO-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
300W
Customer Reference:
Package / Case:
TO-204AE
Current - Collector (Ic) (Max):
50A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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Yes. We ship 2N5686G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N5686G. The transistor is a npn type. The given dimensions of the product include 38.86 x 26.67 x 8.51mm. The product is available in through hole configuration. Provides up to 300 mw maximum power dissipation. The product has a maximum 5 v collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). In addition, the product has a maximum 2 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. The package is a sort of to-204. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 50 a. It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2n5686. It features bipolar (bjt) transistor npn 80v 50a 2mhz 300w through hole to-3. Furthermore, 15 @ 25a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 2mhz. The 5v @ 10a, 50a is the maximum Vce saturation. to-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 300w. Moreover, the product comes in to-204ae. The maximum collector current includes 50a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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