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Manufacturer : ON Semiconductor
Manufacturer Part No : BDX53CG
Enrgtech Part No : ET10001285
Product Range : PolySwitch RXEF Series

ON Semiconductor BDX53CG

TRANS NPN DARL 100V 8A TO-220AB

Product Information

Manufacturer Standard Lead Time : 5 Weeks
Base Part Number : BDX53
Detailed Description : Bipolar (BJT) Transistor NPN - Darlington 100V 8A 65W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce : 750 @ 3A, 3V
Transistor Type : NPN - Darlington
Mounting Type : Through Hole
Vce Saturation (Max) @ Ib, Ic : 2V @ 12mA, 3A
Part Status : Active
Supplier Device Package : TO-220AB
Voltage - Collector Emitter Breakdown (Max) : 100V
Packaging : Tube
Operating Temperature : -65°C ~ 150°C (TJ)
Power - Max : 65W
Package / Case : TO-220-3
Current - Collector (Ic) (Max) : 8A
Current - Collector Cutoff (Max) : 500µA
Manufacturer : ON Semiconductor
Minimum DC Current Gain : 750
Transistor Type : NPN
Dimensions : 10.28 x 4.82 x 9.28mm
Mounting Type : Through Hole
Maximum Emitter Base Voltage : 5 V
Maximum Continuous Collector Current : 8 A
Maximum Collector Base Voltage : 100 V
Maximum Collector Emitter Voltage : 100 V
Maximum Base Emitter Saturation Voltage : 2.5 V
Maximum Collector Cut-off Current : 0.2mA
Height : 9.28mm
Width : 4.82mm
Length : 10.28mm
Package Type : TO-220AB
Number of Elements per Chip : 1
Minimum Operating Temperature : -65 °C
Maximum Collector Emitter Saturation Voltage : 2 V
Maximum Operating Temperature : +150 °C
Pin Count : 3
rohs : RoHS Certificate of Compliance
Transistor Configuration : Single

Technical Documents

  • Bipolar Power Transistor TO220 Pkg Assembly & Test 16/Oct/2015 (PCN Assembly/Origin)
  • BDX(53,54)B,C (Datasheets)
  • TO-220 Case Outline Update 18/Sep/2014 (PCN Design/Specification)
  • Datasheet (Technical Reference)
  • ESD Control Selection Guide V1 (Technical Reference)

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